A Method Integrating Optimal Algorithm and FEM on CMOS Residual Stress

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Journal Reference

Journal of Mechanics / Volume 30 / Issue 02 / April 2014, pp 123-128.

C. Chuang¹, David T. W. Lin^{a2 c1}, Y.-C. Hu^a3, H.-L. Lee^a4, C.-H. Cheng^a5, P.-Z. Chang^a6 , N. B. Quyen^a7

^a1 Department of Mechanical and Electro-mechanical Engin eering, National Sun Yat-sen University, Kaoshiung, Taiwan 80424, R.O.C.and

^a2 Institute of Mechatronic System Engineering, National University of Tainan Tainan, Taiwan 70005, R.O.C.and

^a3 Department of Mechanical and Electromechanical Engineering, National ILan University, ILan, Taiwan 26047, R.O.C.and

^a4 MicroSystems Technology Center, Industrial Technology Research Institute, Tainan, Taiwan 70955, R.O.C.and

^a5 Department of Aeronautics and Astronautics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.and

^a6 Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan 10617, R.O.C. and

^a7 Institute of Mechatronic System Engineering, National University of Tainan, Tainan, Taiwan 70005, R.O.C.

Abstract

Residual stress in MEMS is of inherent importance in various respects. This study proposes a specific method using ANSYS including the birth and death method and combined with the optimal method (SCGM) to reduce the residual stresses during the CMOS fabrication process. The suitable cooling temperature for decreasing the residual stress is proposed and available. It demonstrates that the suitable parameter on the fabrication can reduce the residual stress in MEMS devices without any extra manufacturing process or external apparatus. The proposed method can expand to simulate the realistic MEMS model effectively.

Copyright © The Society of Theoretical and Applied Mechanics, R.O.C. 2013

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