Localization and electron-electron interactions in few-layer epitaxial graphene

Nanotechnology , Volume 25 Number 24, 2014.

Shun-Tsung Lo1, Fan-Hung Liu1, Chang-Shun Hsu1, Chiashain Chuang2, Lung-I Huang2, Yasuhiro Fukuyama3, Yanfei Yang4, Randolph E Elmquist4 and Chi-Te Liang1,2

 

1 Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan

2 Department of Physics, National Taiwan University, Taipei 106, Taiwan
3 National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
4 National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.

 

Abstract

 This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate, such as intervalley scattering, are taken into account. It is suggested that magnetic-field-dependent electron-electron interactions and Kondo physics are required for obtaining a thorough understanding of magnetotransport in few-layer epitaxial graphene.

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epitaxial graphene

 

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