Two-dimensional nanomaterials with its attractive structural and mechanical features are of high interest in a wide range of modern applications including electronic and functional devices.
Several techniques used in the deposition of two-dimensional nanomaterials have achieved some positive results, but still there are challenges and limitations. Another technique, atomic layer deposition which is minimally used to overcome these challenges coupled with possession of other multifarious advantages. Hence, more depth knowledge on surface functionalization of two-dimensional nanomaterials using atomic layer deposition method would be of value to nanotechnology researchers.
The atomic layer deposition technique, which has the capacity for generating thin films, involves a sequential process of precursor reactions with surface of material. It also involves chemisorption of reactant precursors until a saturation point is reached in order to get a desired thickness.
As a result of producing ultra-thin films while using the atomic layer deposition technique, certain precursors, needed to fill these requirements include the inorganic, metal organic and organometallic precursors. Suitable criteria for proper selection of precursors include; volatility, cost-effectiveness, absence of etching during functionalization, easy synthesis, absence of self-decomposition and dissolution, assertive and complete reactions.
Researchers led by Professor Serge Zhuiykov at Ghent University Global Campus Korea published an article in the journal, Applied Surface Science, discussed the superior advantages of using atomic layer deposition technique for surface functionalization of two-dimensional nanomaterials, stating the advantages it possesses for applications involving contemporary devices.
The multifarious advantages of the atomic layer deposition technique over others include; superb uniformity and conformity in the coating of substrates, low-temperature operations, accurate deposition of film thickness with good continuity, high control of atomic level composition amongst others, which makes it attractive for deposition of two-dimensional material nano-architectures.
Due to the attractive results obtained with the use of the atomic layer deposition technique, major developments were achieved in deposition of semiconductor oxide thin films with two-dimensional nano-architectures. It aided the introduction of nano-laminates with precise control of the deposited film thickness coupled with enhancement of doping in two-dimensional semiconductor films.
The authors tested the atomic layer deposition technique for development of an ultra-thin two-dimensional tungsten oxide on silicon wafers. They achieved a stable and uniform deposition of tungsten oxide, which was not the case using other deposition techniques.
This study was able to demonstrate the applicability and competence of using the atomic layer deposition technique for development of two-dimensional nanomaterial semiconductors with enhanced features.
Zhuiykov, S.1, Kawaguchi, T.2,3, Hai, Z.1, Akbari, M.K.1, Heyndrikx, P.M.1 Interfacial Engineering of Two-Dimensional Nano-Structured Materials by Atomic Layer Deposition, Applied Surface Science 392 (2017) 231–243.Show Affiliations
- Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840, South Korea
- Global Station for Food, Land and Water Resources, Global Institution for Collaborative Research and Education, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810, Japan
- Graduate School of Environmental Science, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810, Japan
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