Significance Statement
Variable retention time (VRT) phenomenon in DRAM cell is one of the main sources in retention time degradation and serious issue in DRAM cell transistor recently. Many researches have mentioned that the origin of VRT is gate-induced drain leakage random telegraph noise. Thus, the electrical analysis on trap-detrap sites (traps) causing gate-induced drain leakage random telegraph noise is very important topic for understanding the VRT phenomenon. Thus far, researches on gate-induced drain leakage current random telegraph noise in band-to-band tunneling current region have been mainly conducted. However, with device and supply voltage scaling, gate-induced drain leakage current through trap-assisted tunneling (TAT) mainly flows in the low voltage region. Nevertheless, there are great lack of the researches on trap-assisted tunneling gate-induced drain leakage current random telegraph noise. In this paper, two traps causing gate-induced drain leakage random telegraph noise in trap-assisted tunneling current region were analyzed. And, the accurate method for extracting the distance between the two traps was proposed using trap-assisted tunneling gate-induced drain leakage current ratio and effective permittivity. These analyses provide the insight for understanding the traps causing trap-assisted tunneling gate-induced drain leakage current random telegraph noise and can be applied to any devices where gate-induced drain leakage random telegraph noise in trap-assisted tunneling current region was measured.
Journal Reference
Solid-State Electronics, Volume 109, 2015, Pages 42–46.
Sung-Won Yoo1, Joonha Shin2, Youngsoo Seo1, Hyunsuk Kim1, Sangbin Jeon1, Hyunsoo Kim1,Hyungcheol Shin1
[expand title=”Show Affiliations”]- School of Electrical Engineering and Computer Science, Seoul National University, #059, San 56-1, Daehak-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
- Seoul Science High School, Hyehwa-ro 63, Jongro-gu, Seoul 110-530, Republic of Korea
Abstract
This paper presents an analysis of traps causing random telegraph noise (RTN) in trap-assisted tunneling (TAT) gate-induced drain leakage (GIDL) current. random telegraph noise was shown for the first time to occur as a result of electron trapping rather than hole trapping. In addition, the proper effective permittivity of two different materials is used to accurately determine the distance between two traps causing RTN in TAT GIDL in an oxide.
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