High net modal gain (>100 cm(-1)) in 19-stacked InGaAs quantum dot laser diodes at 1000 nm wavelength band.

Significance Statement

– This is a joint work carried out by the group of Prof. Sugawara at Tokyo Metropolitan Univesity, and the group of Dr. Akahane at NICT.

–  The stacked quantum dot structures were prepared by ulrtahigh rate MBE growth, which were demonstated by Dr. Akarane,
refer to [1] Physica E42(2010)2735–2738, doi: 10.1016/j.physe.2010.05.023 Stacking of 19-quantum dot layers was demonstrated in
[2] Phys. Status Solidi C 9, No. 2, 226–229 (2012) / DOI 10.1002/pssc.201100287.
–  This laser is designed as a prototype of a light emiiter at 1000-nm waveband (T-band), future photonic band trasnport systems proposed by NICT.  The advantage of T-band is descrbed in [3] Jpn. J. Appl. Phys. 51 (2012), 02BG08, doi: 10.1143/JJAP.51.02BG08.

–  We further fabricated 24-stacked quantum dot laser, which showed the highest saturated modal gain at 155 cm^-1. refer to [4] Phys. Status Solidi C, 10: 1461–1464. doi: 10.1002/pssc.201300271.

Journal Reference

Opt Lett. 2013 ;38(13):2333-5.

Tanoue F, Sugawara H, Akahane K, Yamamoto N.

Graduate School of System Design, Tokyo Metropolitan University, 6-6 Asahigaoka, Hino, Tokyo 191-0065, Japan.

Abstract

An InGaAs quantum dot (QD) laser diode with 19-stacked quantum dot separated by 20 nm-thick GaAs spacers was fabricated using an ultrahigh-rate molecular beam epitaxial growth technique, and the laser characteristics were evaluated. A 19-stacked simple broad area quantum dot laser diode was lased at the 1000 nm waveband. A net modal gain of 103 cm(-1) was obtained at 2.25 kA/cm(2), and the saturated modal gain was 145.6 cm(-1); these are the highest values obtained to our knowledge. These results indicate that using this technique to highly stack quantum dot is effective for improving the net modal gain of quantum dot lasers.

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