
Journal Reference
Microelectronics Reliability, Volume 55, Issues 9–10, 2015, Pages 1821-1825.
Jacques1, R. Leroy2, M. Lethiecq1
[expand title=”Show Affiliations”]- GREMAN CNRS-UMR 7347, University of Tours, 7 avenue Marcel Dassault, 37200 Tours, France
- Mechanics and Rheology Laboratory (LMR EA 2640), University of Tours, France
Abstract
This paper highlights the impact of bonding techniques (Al wire and Al ribbon) on the aging of Schottky diodes, assembled in D2PAK package, subjected to temperature cycling. The experimental test results coupled with failure analyses exhibit a better robustness and a lifetime about 2.3 times higher for the ribbon bonding assembly. A higher contact surface, the low loop profile and stiffness of ribbons allow slowing down crack initiation and propagation between the Al bond and Al metallization on the top of the silicon die.
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