In this paper, the multi-walled carbon nanotube bundle (MWCNTB) based shielded through-silicon via (S-TSV) is proposed and the compact expression for the equivalent conductivity of MWCNTB (σMWCNTB) is deduced to calculate the resistance of MWCNTB based S-TSV (MS-TSV). Then, the electrical characteristics including the S parameters, attenuation constant and time delay are investigated. The results indicate that |S21| of MS-TSV increases with the increase of the outermost diameter of MWCNT and decrease of the thickness of the shielding layer. Compared with the copper filled S-TSV (CuS-TSV), the MS-TSV has a larger |S21|, smaller attenuation and shorter time delay. Finally, the impact of the geometrical parameters on the conductivity of MS-TSV is analyzed. Also, the minimum packing density of MWCNTB satisfying σMWCNTB≥σCu has been deduced. The results show that the outermost diameter of MWCNT has the most significant impact on the conductivity of MS-TSV, and thicker MWCNT is helpful to increase the conductivity of MS-TSV, decrease the packing density of MWCNTB and reduce manufacturing difficulty.
Jinrong Su, Runbo Ma, Xinwei Chen, Liping Han, Rongcao Yang, Wenmei Zhang, Low-loss shielded through-silicon vias filled with multi-walled carbon nanotube bundle. Microelectronics Journal, 58, 2016, 83–88.
College of Physics and Electronics, Shanxi University, Shanxi 030006, People’s Republic of China