Advances in Engineering Advances in Engineering features breaking research judged by Advances in Engineering advisory team to be of key importance in the Engineering field. Papers are selected from over 10,000 published each week from most peer reviewed journals.
Journal Reference
International Journal of Thermophysics, 2015, Volume 36, Issue 5, pp 980-986.
Yan Liu1, Jing Yan1, Hongjuan Wang1, Buwen Cheng2, Genquan Han1
[expand title=”Show Affiliations”]- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing, People’s Republic of China
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People’s Republic of China
Abstract
Compressively strained Ge0.973Sn0.027 and Ge0.925Sn0.075 p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with low-temperature Si2H6 surface passivation. High crystallinity GeSn films epitaxially grown on a Ge(001) substrate are used for the device fabrication. The impacts of the Sn composition on the subthreshold swing S, threshold voltage VTH, on-state current ION, and effective hole mobility μeff of the devices are investigated. GeSn pMOSFETs with different Sn compositions show a similar S, indicating almost the same midgap density of interface states Dit. A positive shift of VTH with an increase of the Sn composition is observed. A Ge0.925Sn0.075 pMOSFET exhibits a significant improvement in ION as compared to a device with a lower Sn composition, which is due to the superior hole mobility in a device with a higher Sn composition. Ge0.925Sn0.075 pMOSFETs achieve a peak effective hole mobility μeff of 500cm2⋅V−1⋅s−1, which is much higher than that of Ge0.973Sn0.027 devices. The enhancement of the compressive strain and chemical effect in the channel region with increased Sn composition leads to an improvement of μeff.
Go To International Journal of Thermophysics
