Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications

Journal of Alloys and Compounds, Volume 585, 5 February 2014, Pages 94-97.

Jae-chul Lee, Ji-eun Lee, Ju-won Lee, Jae-choon Lee, N.G. Subramaniam, Tae-won. Kang, Rajeev Ahuja

Physics Department of Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715, Republic of Korea and

Quantum Functional Semiconductor Research Center, Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715, Republic of Korea and

Nano Information Technology Academy, Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715, Republic of Korea and

Department of Physics and Astronomy, Uppsala University, Box 516, 75120 Uppsala, Sweden.

 

Abstract

 

ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0 0 0 1) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV–Visible spectrometer. From the plot for ({Alpha}hυ)2 vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85 eV with increasing Se concentration.

 

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pulsed laser deposition technique

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