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Applied Surface Science, Volume 285, Part B, 2013, Pages 625-628.
Ruei-San Chen, Chih-Che Tang, Ching-Lien Hsiao, Per Olof Holtz, Jens Birch.
Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 43, Sec.4, Keelung Rd., Taipei 10607, Taiwan AND
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan &
Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Abstract
The electronic transport properties of the wide-bandgap aluminum indium nitride (AlInN) nanorods (NRs) grown by ultrahigh-vacuum magnetron sputter epitaxy (MSE) have been studied. The conductivities of the ternary compound nanostructure locates at the value of 15 Ω−1 cm−1, which is respectively one and two orders of magnitude lower than the binary GaN and InN counterparts grown by chemical vapor deposition (CVD). The very shallow donor level/band with the activation energy at 11 ± 2 meV was obtained by the temperature-dependent measurement. In addition, the photoconductivity has also been investigated. The photoconductive (PC) gain of the NRs device can reach near 2400 under a low bias at 0.1 V and the light intensity at 100 W m−2 for ultraviolet response in vacuum. The power-insensitive gain and ambience-dependent photocurrent are also observed, which is attributed to the probable surface-controlled PC mechanism in this ternary nitride nanostructure.
