Single Source Precursor-based Solvothermal Synthesis of Heteroatom-doped Graphene and Its Energy Storage and Conversion Applications.

Scientific Reports 4, Article number: 5639, 2014.

Bo Quan, Seung-Ho Yu, Dong Young Chung, Aihua Jin, Ji Hyun Park, Yung-Eun Sung, Yuanzhe Piao.

Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742, Republic of Korea &
Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea &
School of Chemical and Biological Engineering, Seoul National University, Seoul 151-742, Republic of Korea &
Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-742, Republic of Korea &
Advanced Institutes of Convergence Technology, Suwon 443-270, Republic of Korea.

 

ABSTRACT

Solvothermal processes are considered efficient approaches for the gram-scale production of graphene. Further modification of graphene by chemical doping is an important approach to tailor its properties. In this work, we successfully synthesized sulfur-doped graphene by using a solvothermal method with dimethyl sulfoxide as a precursor, which is a common laboratory reagent. Nitrogen-doped graphene was produced to demonstrate the generality of this process. These heteroatom-doped graphene materials exhibited high surface areas and high contents of heteroatoms. Furthermore, the lithium-ion storage properties and oxygen reduction reaction catalytic activity of these materials were also investigated. The success of this approach might facilitate the development of other advanced graphene-based materials with relative simplicity, scalability, and cost effectiveness for use in various potential applications.

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Figure: Credit Scientific Reports.

S-doped Graphene

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