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physica status solidi (a), Volume 211, Issue 1, pages 180–183, 2014.
Liang Pang1,*, Philip Krein1, Ki-Won Kim2,Jung-Hee Lee2 , Kyekyoon (Kevin) Kim1
1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, IL, USA.
2. School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, Republic of Korea.
Abstract
We report on AlGaN/GaN high electron mobility transistors (HEMTs) for high current operation achieved by selective area growth (SAG) technique based on plasma-assisted molecular beam epitaxy (PAMBE). Significant improvement in DC characteristics of the multiple-gate-finger HEMTs was demonstrated when SAG was employed. Furthermore, when group of HEMTs were interconnected, the resulted large-periphery device, with the total gate width of 5.2 mm, exhibited a maximum current of 1.75 A and an on-state resistance of 4.76 mΩ cm2, showing the efficacy of PAMBE-SAG to fabricate GaN-based HEMTs for high-power applications.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
