Advances in Engineering Advances in Engineering features breaking research judged by Advances in Engineering advisory team to be of key importance in the Engineering field. Papers are selected from over 10,000 published each week from most peer reviewed journals.
Nanotechnology , Volume 25 Number 24, 2014.
Shun-Tsung Lo1, Fan-Hung Liu1, Chang-Shun Hsu1, Chiashain Chuang2, Lung-I Huang2, Yasuhiro Fukuyama3, Yanfei Yang4, Randolph E Elmquist4 and Chi-Te Liang1,2
1 Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
2 Department of Physics, National Taiwan University, Taipei 106, Taiwan
3 National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
4 National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
Abstract
This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate, such as intervalley scattering, are taken into account. It is suggested that magnetic-field-dependent electron-electron interactions and Kondo physics are required for obtaining a thorough understanding of magnetotransport in few-layer epitaxial graphene.
