Advances in Engineering Advances in Engineering features breaking research judged by Advances in Engineering advisory team to be of key importance in the Engineering field. Papers are selected from over 10,000 published each week from most peer reviewed journals.
L. Czornomaz, M. El Kazzi, M. Hopstaken, D. Caimi, P. Mächler, C. Rossel, M. Bjoerk, C. Marchiori, H. Siegwart, J. Fompeyrine
Solid-State Electronics, Volume 74, August 2012
Abstract
CMOS compatible self-aligned access regions for indium gallium arsenide (In0.53Ga0.47As) implant-free n-type metal–oxide–semiconductor field effect transistors (MOSFETs) are investigated. In situ doped n+ source/drain regions are selectively grown by metal-organic vapor phase epitaxy and self-aligned Nickel–InGaAs alloyed metal contacts are obtained using a self-aligned silicide-like process, where different process conditions are studied. Soft pre-epitaxy cleaning is followed by X-ray photoelectron spectroscopy, while the Ni–InGaAs/III–V interface is characterized by back-side SIMS profiling. Relevant contact and sheet resistances are measured and integration issues are highlighted. Gate-first implant-free self-aligned n-MOSFETs are produced to quantify the impact of Ni–InGaAs contacts on the device performance.
Go to Journal
