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Applied Physics B, September 2012, Volume 108, Issue 4, pp 767-771.
T.-P. Nguyen, M. Schiemangk, S. Spießberger, H. Wenzel,A. Wicht, A. Peters, G. Erbert, G. Trankle.
Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany.
School of Engineering Physics, Hanoi University of Science and Technology, Nr. 1 Dai Co Viet, Hanoi, Vietnam.
Humboldt-Universitat zu Berlin, Institut fur Physik, Newtonstr. 15, 12489, Berlin, Germany.
Abstract
We demonstrate the realization of narrow linewidth, high-power ridge waveguide DFB diode lasers emitting near 780 nm. The effects of the coupling coefficient, the laser chip length, and the fabrication process onto the spectral linewidth are discussed. By optimizing both the cavity length and the coupling coefficient, we achieve an intrinsic spectral linewidth as small as 35 kHz at an output power of 270 mW.
