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Applied Physics Letters, Volume 102, Issue 16, id. 163307 (2013).
Milan, D. C.; Villalvilla, J. M.; Díaz-García, M. A.; Untiedt, C.
AA(Departamento de Física Aplicada and Instituto Universitario de Materiales de Alicante, Facultad de Ciencias (Fase II), Universidad de Alicante, E-03080 Alicante, Spain)
Abstract
The electronic gap structure of the organic molecule N,N’-diphenyl-N,N’-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine, also known as TPD, has been studied by means of a Scanning Tunneling Microscope (STM) and by Photoluminescence (PL) analysis. Hundreds of current-voltage characteristics measured at different spots of the sample show the typical behavior of a semiconductor. The analysis of the curves allows to construct a gap distribution histogram which reassembles the PL spectrum of this compound. This analysis demonstrates that STM can give relevant information, not only related to the expected value of a semiconductor gap but also on its distribution which affects its physical properties such as its PL.
