Advances in Engineering Advances in Engineering features breaking research judged by Advances in Engineering advisory team to be of key importance in the Engineering field. Papers are selected from over 10,000 published each week from most peer reviewed journals.
Microelectronic Engineering, Volume 104, April 2013, Pages 105-109.
Kai-Hsuan Lee, Ping-Chuan Chang, Shoou-Jinn Chang.
Nano Science Group, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
Department of Electro-Optical Engineering, Kun Shan University, Yung-Kang Dist., Tainan 71003, Taiwan
Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
Abstract
AlGaN/GaN metal–oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp as the excitation source. High quality SiO2 was successfully formed by PHCVD and it exhibited exactly stoichiometric as gate oxide and passivation dielectric for MQW-based MOS-HEMT. The protection offered by the passivation of PHCVD of SiO2 may contribute to the significantly reduced current dispersion and improved RF performance. With 1-um-long gate length at drain–voltage of 10 V, it exhibited a maximum drain current Id(max) of 966 mA/mm and a peak transconductance gm(max) of 127 mS/mm, while the unity gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 13.9 and 33.9 GHz, respectively.
