Amorphous indium–gallium–zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model

Tsung-Hsiang Shih, Shou-Wei Fang, Jen-Yu Lee, Guan-Yu Lin, Yu-Hung Chen, Lung-Pao Hsin, Hsin-Hung Li, Chin-Wei Yang, Chien-Tao Chen, Hsiung-Hsing Lu, Kai-Chung Cheng, Chih-Yuan Lin, Chia-Yu Chen, Chun-Ming Yang, He-Ting Tsai, Yu-Hsin Lin
Solid-State Electronics, Volume 73, July 2012

Abstract

We have successfully fabricated large sized amorphous indium–gallium–zinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as the oxygen atom supplier and converts the titanium layer into titanium oxide layer, which is found to induce instability of the device. Sample without titanium oxide has an initial threshold voltage shift is less than ±0.1 V after the repeatedly measuring over a period of two weeks. In addition, the IGZO based device demonstrated superior transfer characteristic. This paper established that the stability of the amorphous indium–gallium–zinc-oxide based active-matrix liquid-crystal display can be predicted by Stretched-Exponential model.

Tsung-Hsiang Shih, Ph.D., worked for the large size OLED Technology Department in AUO. The team demonstrated the 32” AMLCD and AMOLED TVs using IGZO backplanes in 2010 SID and 2011 FPDI shows, respectively. The OLED panel using side by side (SBS) structure and fine metal mask (FMM) technology was used to evaporate successfully. The team was devoted to the mass production of IGZO AMOLED TVs now.

 

 

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