Anisotropic electro-optic effect on InGaAs quantum dot chain modulators

Optics Letters, Volume 38, Issue 20, Page 4262.

Wei Liu, Baolai Liang, Diana Huffaker, and Harold Fetterman.

 

Electrical Engineering, University of California—Los Angeles, Los Angeles, California 90095, USA and

California NanoSystems Institute, University of California—Los Angeles, Los Angeles, California 90095, USA

Abstract

 

We investigated the anisotropic electro-optic (EO) effect on InGaAs quantum dot (QD) chain modulators. The linear EO coefficients were determined as 24.3  pm/V (33.8  pm/V) along the [011] direction and 30.6  pm/V (40.3  pm/V) along the [011¯] direction at 1.55 um (1.32 um) operational wavelength. The corresponding half-wave voltages (Vπs) were measured to be 5.35 V (4.35 V) and 4.65 V (3.86 V) at 1.55 um (1.32 um) wavelength. This is the first report on the anisotropic EO effect on QD chain structures. These modulators have 3 dB bandwidths larger than 10 GHz.

© 2013 Optical Society of America.

 

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