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Appl. Phys. Lett. 103, 093504 (2013).
Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi.
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan and
Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA and
Center for Innovative Integrated Electronic Systems, Tohoku University, 6-6-05 Aramaki aza aoba, Sendai 980-8579, Japan and
Graduate School of Engineering, Nagoya University, Chikusa, Nagoya 464-8603, Japan.
Abstract
We theoretically study an oxygen vacancy ( VO ) diffusion in Al2O3-based resistive-random-access-memories (ReRAMs). We find that the activation energy of VO diffusion in Al2O3strongly depends on the charge state of VO . In ReRAM, the charge state of VO can be easily changed by applying voltage and the lowest activation energy is observed at q = 2+. The operation voltage on Al2O3-based ReRAM is close to the activation energy at q = 2+, indicating that VO diffuses with doubly positive state. Moreover, the activation energy at q = 0 is close to that observed in bulk Al2O3, which explains the discrepancy between previous experimental and theoretical studies.
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