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Journal of Electronic Materials, 2015, Volume 44, Issue 2, pp 682-687.
Li Qin Zhou 1,2, Mukul Dubey 3, Raul Simões 1,2, Qi Hua Fan 3, Victor Neto1,2
- Centre for Mechanical Technology and Automation, Department of Mechanical Engineering University of Aveiro, 3810-193, Aveiro, Portugal
- Aveiro Nanotechnology Institute, University of Aveiro, 3810-193, Aveiro, Portugal
- Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD, USA
Abstract
We report an electrically conductive composite prepared by sintering ZnO and metallic Zn powders. Microstructure analysis combined with electrical conductivity studies indicated that when the proportion of metallic Zn reached a threshold (∼20 wt.%), a metal matrix was formed in accordance with percolation theory. This composite has potential as a sputtering target for deposition of high-quality ZnO. Use of the ZnO:Zn composite completely eliminates target poisoning effects in reactive sputtering of the metal, and enables deposition of thin ZnO films at rates much higher than those obtained by sputtering of pure ZnO ceramic targets. The optical transmittance of the ZnO films prepared by use of this composite is comparable with that of films produced by radio frequency sputtering of pure ZnO ceramic targets. The sputtering characteristics of the conductive ZnO:Zn composite target are reported, and possible mechanisms of the high rate of deposition are also discussed.
