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Microelectronics Reliability, Volume 52, Issues 9–10, September–October 2012, Pages 1905-1908
Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, G.-J. Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, Pohang Gyeongbuk 790-784, Republic of Korea
Memory Research & Development Division, SK hynix Inc., Icheon, Gyeonggi 467-701, Republic of Korea
Abstract
The effect of electron–electron scattering (EES) on a nanoscale n-channel metal–oxide–semiconductor field-effect transistor was investigated. Experimental results indicate that EES stress creates more interface states and negative oxide charges than does channel hot-carrier (CHC) stress. Moreover, shifts of gate induced drain leakage current and substrate current confirm that defects generated by EES are distributed in the channel and drain region. Thus, the worst case hot carrier stress condition should be modified from CHC stress to EES stress.
