Effect of proton irradiation on AlGaN/GaN micro-Hall sensors

Applied Physics Letters, Volume 102, Issue 19, id. 193510 (4 pages) (2013).

Abdelkader Abderrahmane, S. Koide, H. Okada, H. Takahashi, S. Sato, T. Ohshima, A. Sandhu.

 

Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan and

Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan and

Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-cho, Takasaki, Gunma 370-1292, Japan.

Abstract 

The magnetoelectric properties of AlGaN/GaN micro-Hall effect sensors were studied after 380 keV proton irradiation. After irradiation the current-voltage measurements, stability of the magnetic sensitivity of the sensors, and the sheet electron density were degraded with a dramatic decrease of the electron mobility at high temperatures. Raman spectroscopy showed a degradation in the crystalline quality of GaN crystal, but there was no change in the strain.

© 2013 AIP Publishing LLC

 

Go To Journal

 

Check Also

Carbon-fiber-assisted-glass-fabric-composite-materials-broadband-radar-cross-section-reduction-Advances-in-Engineering

short carbon fibers for broadband radar cross section reduction