Microelectronic Engineering, 26 January 2013.
Anne-Lise Daltin, Ahmed Addad, Jean-Paul Chopart.
LISM, EA 4695, URCA, B.P. 1039, 51687 Reims Cedex 2, France.
UMET, UMR CNRS 8207, Universite Lille 1, 59655 Villeneuve d’Ascq Cedex, France.
Tin dioxide is a wide-band gap (3.6 eV) semiconductor with numerous potential applications in batteries, gas sensors, and dye-sensitized solar cells. In this study nanocrystalline tin oxide nanowires have been synthesized by electrochemical deposition and oxidation in anodic aluminum oxide template. Electrochemical synthesis has been controlled by chronoamperometry and oxidation by X-ray diffraction. Polycrystalline nanowires with 140 nm in diameter and 3 um in length have been obtained. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies have highlighted a uniform nanowire structure. High resolution transmission electron microscope (TEM FEI Tecnai G2-20 twin) was employed to characterize the crystalline structure of 5 nm diameter tin oxide grains. Tetragonal tin oxide phase has been characterized by X-ray powder diffraction and the interplanar distance of 0.32 nm corresponding to the SnO2 crystal obtained by HRTEM has confirmed the structure.