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Vac. Sci. Technol. B32, 03D105(2014).
Sivan Fadida1, Felix Palumbo1, Laura Nyns2, Dennis Lin2, Sven Van Elshocht2, Matty Caymax2 , Moshe Eizenberg3
1 Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel and
2 Imec, Kapeldreef 75, B-3001 Leuven, Belgium and
3 Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel.
Abstract
The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electricalmeasurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.
© 2014 American Vacuum Society.