Advances in Engineering Advances in Engineering features breaking research judged by Advances in Engineering advisory team to be of key importance in the Engineering field. Papers are selected from over 10,000 published each week from most peer reviewed journals.
Solid-State Electronics, Volume 94, April 2014, Pages 61–65.
Nhu Thuy Ho, V. Senthilkumar, Yong Soo Kim.
Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, South Korea.
Abstract
In this study, we investigated the resistive switching behavior of pristine graphene oxide and thermally reduced GO. Impedance spectroscopy and current–voltage analysis were used to verify the possible physical mechanism of the switching operation. Our observations demonstrated that, the switching operation originates from the oxidation/reduction at the top interface of Al electrode and oxygen migration inside the active layer. Reversible redox reaction Al+1 + xO−2 ↔ AlOx is ground for the conduction electrons.
