Microelectronic Engineering, Volume 103, March 2013, Pages 66-69.
Janice H. Nickel, John Paul Strachan, Matthew D. Pickett, C. Tom Schamp, J. Joshua Yang, John A. Graham, R. Stanley Williams.
Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, United States
SVTC Technologies, 2706 Montopolis Drive Austin, TX 78741, United States
Graham Technology Consulting, LLC, Fort Collins, CO 80525, United States
Non-linear, bipolar memristor crossbar structures, suitable for high scalability, have been fabricated in fully compatible Back-End-of-Line materials and processes. The original four mask fabricated crossbar structure exhibited poor electrical characteristics. Detailed failure analysis revealed significant processing artifacts affecting device behavior, including leakage currents from sidewall conduction and thicker than anticipated switching layer. To resolve the problems created by these processing artifacts, a novel device structure, termed “reverse dual damascene”, was designed and implemented. We present device and failure analysis results from the original structure, the revised structure and process, and show the improved device electrical characterization results.