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Applied Surface Science, Volume 284, 2013, Pages 950–955.
M.I. Rusu, R. Savastru, D. Savastru, D. Tenciu, C.R. Iordanescu, I.D. Feraru, C.N. Zoita, R. Notonier, A. Tonetto, C. Chassigneux, O. Monnereau, L. Tortet, C.E.A. Grigorescu,
National Institute R&D Optoelectronics, INOE 2000, 409 Atomistilor, Magurele, PO Box MG-5, 77125, Romania.
Abstract
Films of the material systems ZnSnSb and MnGeSb doped with Fe and Co respectively have been grown by pulsed laser deposition on silicon. Room temperature Hall effect measurements show that all Fe-doped PLD films are n-type whereas MnGeSb:Co ones are p-type. Carrier concentrations vary with film thickness, resulting in ∼1017–1018cm−3 for ZnSnSb:Fe and ∼1020–1021cm−3 for MnGeSb:Co films. Carrier mobilities are of the order 102 cm2/Vs in the MnGeSb:Co films and between 102 and 103 cm2/V s in ZnSnSb:Fe. Curie points above room temperature have been found for samples of both material systems.
Additional Information:
The combination of non-volatility and band gap engineering in a single material makes dilute magnetic semiconductors with room temperature ferromagnetism particularly attractive for applications in spintronics and optoelectronics.
In search of new possible DMSs our experimental work (Applied Surface Science 284 (2013) 950– 955) has been devoted to producing bulk material and thin films in the systems ZnSnSb and MnGeSb with either Fe or Co as doping elements. Bulk ZnSnSb2 is quite well established whereas thin films are “newborns”. The ternary MnGeSb films have been deposited from various combinations of targets leading in general to slight overstoichiometries of MnGeSb2, the intended ordered compound. Still, PLD of films of either ternary system makes a premiere. The bulk material prepared by the vertical gradient freeze (VGF) technique served as targets for pulsed laser deposition (PLD) of films on silicon single crystal and other substrates. All films show semiconductor like properties, with moderate carrier mobility (102-103cm2/V s) at room temperature. Curie points have been found above 300K.
Fig. caption: PLD targets and films in the systems ZnSnSb and MnGeSb.
