Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

J. Vac. Sci. Technol. B 32, 02C115 (2014).

M. Sawicka, G. Muziol, H. Turski, A. Feduniewicz-Żmuda, M. Kryśko, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, M. Albrecht, R. Kucharski, P. Perlin, C. Skierbiszewski.

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland and

TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw, Poland and

Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489, Germany and

Ammono S.A., Czerwonego Krzyża 2/31, 00-377 Warsaw, Poland.

 

Abstract

 

Nitride laser diodes grown on classical polar (0001) GaN substrates are reaching the maturity. The constant need toimprove their performance motivates scientists to explore the field of semipolar and nonpolar growth directions to work beyond the physical limits of polar devices. The novelty of the presented work is not only the use of semipolar (20-21) ammonothermalGaN substrates to fabricate the laser diodes but also the technique that the heterostructureis fabricated.

In the presented paper we demonstrate the laser diodes grown by plasma-assisted molecular beam epitaxy (PAMBE) on semipolar GaN substrates. Lasing is observed at 388 nm at room temperature in pulse mode. This is the world first demonstration of PAMBE-grown semipolar (20-21) GaN laser diodes.The laser processing was carried out at TopGaN, Polish company focused on the development of GaN laser diodes. We tested two methods of laser facet fabrication that gave us an insight to the facet quality obtained by each of them.

 

Go To Journal

Additional Information

More results in:

• Journal of Vacuum Science and Technology http://dx.doi.org/10.1116/1.4865913,
• Applied Physics Letters http://dx.doi.org/10.1063/1.4812201
• and in Journal of Physics D http://stacks.iop.org/0022-3727/47/i=7/a=073001