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Journal of Physics D: Applied Physics Volume 47 Number 43, 2014.
Guiru Gu1, Neda Mojaverian1,2, Jarrod Vaillancourt3 and Xuejun Lu1
1 Department of Electrical and Computer Engineering, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA and
2 Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433, USA and
3 Applied NanoFemto Technologies, LLC, 181 Stedman St. #2, Lowell, MA 01851, USA.
Abstract
In this paper, we analyse surface plasmonic resonance (SPR) induced near-field electric-field vector distribution in the quantum dot (QD) region and determine their roles in quantum dot infrared photodetector (QDIP) enhancement. SPR can be excited in metallic two-dimensional subwavelength hole arrays (2DSHAs) when illuminated at resonant wavelengths. The SPR induced near-field vectors (Ez, Ex and Ey) and their distributions and overlaps with the QD active region are simulated. A long-wave infrared (LWIR) QDIP is fabricated with the 2DSHA plasmonic structure to experimentally measure the SPR enhancement spectrum and compare it with the near-field vector components and their distribution in QDs. We found that QDIP enhancement is closely related to the near-field intensity overlap integral in the QD region. The large near-field overlap integral corresponds to high QDIP enhancement. Such near-field overlap integral dependent plasmonic enhancement is attributed to the interaction of and the electric-dipole interaction in QDs.
