Advances in Engineering Advances in Engineering features breaking research judged by Advances in Engineering advisory team to be of key importance in the Engineering field. Papers are selected from over 10,000 published each week from most peer reviewed journals.
Appl. Phys. Lett. 102, 181903 (2013).
J. Chen, M. Trigo, S. Fahy, É. D. Murray, Y. M. Sheu, T. Graber, R. Henning, Y. J. Chien, C. Uher , D. A. Reis.
PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA and
Department of Photon Science and Applied Physics, Stanford University, Stanford, California 94305, USA and
Department of Physics, University College Cork, Cork, Ireland and
Department of Chemistry, University of California, Davis, California 95616, USA and
Center for Integrated Nanotechnologies, MS K771, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA and
The Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois 60637, USA and
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA.
Abstract
We use time- and momentum-resolved x-ray scattering to study thermalization in a photo-excited thin single crystal bismuth film on sapphire. The time-resolved changes of the diffusescattering show primarily a quasi-thermal phonon distribution that is established in ≲100psand that follows the time-scale of thermal transport. Ultrafast melting measurements under high laser excitation show that epitaxial regrowth of the liquid phase occurs on the time-scale of thermal transport across the bismuth-sapphire interface.
© 2013 AIP Publishing LLC
