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Solid-State Electronics, Volume 81, March 2013, Pages 86-90.
Pia Juliane Wessely, Frank Wessely, Emrah Birinci, Bernadette Riedinger, Udo Schwalke.
Institute for Semiconductor Technology and Nanoelectronics (ISTN), Technische Universitat Darmstadt, Schlossgartenstrasse 8, 64289 Darmstadt, Germany.
Fraunhofer-Institut für Werkstoffmechanik, Wohlerstrasse 11, 79108 Freiburg, Germany.
Abstract
We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in situ grown bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is determined by the selected CCVD process parameters, e.g. temperature and gas mixture. BiLGFETs exhibit ultra-high on/off-current ratios of 107 at room temperature, exceeding previously reported values by several orders of magnitude. This will allow a simple and low-cost integration of graphene devices for digital nanoelectronic applications in a hybrid silicon CMOS environment for the first time.
