ZnO-based resonant cavity enhanced metal–semiconductor–metal ultraviolet photodetectors

Solid-State Electronics, Volume 79, January 2013, Pages 223-226.
Hsin-Ying Lee, Yu-Ting Hsu, Ching-Ting Lee.

Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC.

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC.

 

Abstract

 

Employing the vapor cooling condensation system and the distributed Bragg reflectors (DBRs), an intrinsic zinc-oxide (i-ZnO) film and Fabry–Perot cavity were deposited and used as the structure of the ZnO-based resonant cavity enhanced metal–semiconductor-metal ultraviolet photodetectors (RCE MSM UV PDs). The reflection of the DBRs with 18.5 and 2.5 HfO2/SiO2 pairs at a wavelength of 305 nm was 98.9% and 33.7%, respectively. Owing to the RCE structure, the 50 nm-thick ZnO-based RCE MSM UV PDs exhibited a UV–visible ratio of 265, a photoresponsivity of 0.268 A/W, and a detectivity of 1.19 × 1010 cm Hz0.5 W−1 at a wavelength of 305 nm.

 

 

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