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Sensors and Actuators B: Chemical, Volume 162, Issue 1, 20 February 2012, Pages 149-152
R. De Angelis, M. Casalboni, F. Hatami, A. Ugur, W.T. Masselink, P. Prosposito
Physics Department and INSTM, University of Rome, “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Rome, Italy
Department of Physics, Humboldt University, Newtonstr. 15, D-12489 Berlin, Germany
Abstract
We investigated uncapped InP quantum dots grown epitaxially on InGaP buffer layer as an optically active element for chemical vapour detection. Near infrared luminescence has been studied as a function of the external environment. QD luminescence intensity changes rapidly and reversibly on exposure to methanol vapour while its spectral shape remains unchanged. For QDs about 45 nm average lateral size and 4–6 nm height, sensitivity to methanol vapour in the range 3.3 × 104–7.2 × 103 ppm has been demonstrated.
