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Erlbacher Tobias
Solid-State Electronics, Volume 75, September 2012
Abstract
Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.
Additional Information:
The feasibility for using SONOS-type non-volatile memory stacks for large area anti-fuse devices has been demonstrated for power electronic applications. The devices can be fabricated using standard CMOS technology and device shrinkage highly increases integration density. The proposed concept offers advantages over existing mechanical solutions making it suitable for high-end value-added battery driven applications on automotive, medical, aviation and space markets.
Devices can be fabricated with a reduced set of process steps compared to power semiconductor devices. Moreover, these safety switches are easily integrated into existing smart-power IC processes where SONOS type memory devices is already available, e.g. high temperature automotive technologies.
To further increase current handling capabilities for application with secondary batteries, a vertical device design can be readily implemented. Assembly and mounting techniques similar to power semiconductor devices promise high reliability and keep production costs under control.
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