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Instruments and Experimental Techniques, May 2013, Volume 56, Issue 3, pp 353-357.
Yu. V. Shevtsov, B. M. Kuchumov, A. R. Semenov, I. K. Igumenov.
Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090, Russia.
Abstract
An apparatus for chemical deposition of layers of different materials with pulsed automated dosing of a hot gas phase of volatile metal-organic compounds (precursors) admitted into a reaction chamber is described. The apparatus has three channels for dosing the gas precursor phase and three channels for dosing reacting gases. As an example, a technique for depositing HfO2 films on a (100)Si substrate is presented, and the deposited films are analyzed. It is shown, that this apparatus can be used to deposit layers on complex 3D systems with a large aspect ratio using an example of the deposition of HfO2 layers on the inner surfaces of channels of a microchannel plate.
Figure Legend
System of the channel for a dosed supply of the gas phase of a metal–organic compound and a reacting gas to the reaction chamber: (1) precursor evaporator, (2) boat with a precursor, (3) evaporator heater, (4) heat insulation of the evaporator, (5) evaporator radiator, (6) fragment of the thermostat case, (7) dosing volume, (8) reaction chamber, (9) substrate heater, (10) flange for sample replacement, (11) inlet valve to the dosing volume from the evaporator, (12) inlet valve to the reaction chamber from the dosing volume, (13) inlet valve for admission of a reacting gas to the reaction chamber, (14) valve for evacuation of the dosing volume, and (15) valve for evacuation of the reaction chamber.
