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Vac. Sci. Technol. B 32, 031601 (2014).
Jae Uk Lee1, Seongchul Hong1, Jinho Ahn 1,a), Jonggul Doh2 , SeeJun Jeong3
1 Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea and
2 Mask Development Team, Semiconductor R&D Center, Samsung Electronics, Co., Ltd., Hwasung, Gyeonggi 445-701, South Korea and
3 Department of Convergence Nanoscience, Hanyang University, Seoul 133-791, South Korea.
Abstract
The authors evaluated the feasibility of using coherent scattering microscopy (CSM) as an actinicmetrology tool by employing it to determine the critical dimension (CD) and normalized image log-slope (NILS) values of contaminated extreme ultraviolet (EUV) masks. CSM was as effective as CD scanning electron microscopy (CD-SEM) in measuring the CD values of clean EUV masks in the case of vertical patterns (nonshadowing effect); however, only the CSM could detect shadowing effect for horizontal patterns resulting in smaller clear mask CD values. Owing to weak interaction between the low-density contaminant layer and EUV radiation, the CSM-based CD measurements were not as affected by contamination as were those made using CD-SEM. Furthermore, CSM could be used to determine the NILS values under illumination conditions corresponding to a high-volume manufacturing tool.
