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Appl. Phys. Lett. 103, 103301 (2013).
Eleonora Macchia, Francesco Giordano, Maria Magliulo, Gerardo Palazzo, Luisa Torsi.
Dipartimento di Chimica, Università degli Studi di Bari “Aldo Moro,” Bari 70126, Italy and
Dipartimento Inter-Ateneo di Fisica “M. Merlin,” Università e del Politecnico di Bari, Bari 70126, Italy and
Consorzio Interuniversitario Sistemi a Grande Interfase, CSGI, Bari 70126, Italy.
Abstract
A model for the electrical characteristics of Functional-Bio-Interlayer Organic Field-Effect Transistors (FBI-OFETs) electronic sensors is here proposed. Specifically, the output current-voltage characteristics of a streptavidin (SA) embedding FBI-OFET are modeled by means of the analytical equations of an enhancement mode p-channel OFET modified according to an ad hoc designed equivalent circuit that is also independently simulated with PSPICE. An excellent agreement between the model and the experimental current-voltage output characteristics has been found upon exposure to 5 nM of biotin. A good agreement is also found with the SA OFETparameters graphically extracted from the device transfer I-V curves.
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