Ferromagnetic Schottky junctions using half-metallic Co2MnSi/diamond heterostructures

Appl. Phys. Lett. 103, 052408 (2013).

K. Ueda, T. Soumiya, M. Nishiwaki, H. Asano.

Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.

 

Abstract

 

We demonstrate half-metallic Heusler Co2MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co2MnSi/diamond interfaces. The Co2MnSi films ondiamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co2MnSi films. Schottky junctions formed using the Co2MnSi/diamond heterostructures at 400 °C showed clear rectification properties with arectification ratio of ∼103. The Schottky barrier heights of the Co2MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co2MnSi is a promising spin source for spin injection into diamond.

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