Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

Applied Surface Science, Volume 282, 1 October 2013, Pages 590-594
R. Santos, J. Loureiro, A. Nogueira, E. Elangovan, J.V. Pinto, J.P. Veiga, T. Busani, E. Fortunato, R. Martins, I. Ferreira

 

CENIMAT/I3N, Departamento de Ciencias dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal

 

Abstract

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 uV/K and electrical conductivity of 5.5 (Ω m)−1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

 

 

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