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Applied Physics Letters, Volume 102, Issue 19, id. 193510 (4 pages) (2013).
Abdelkader Abderrahmane, S. Koide, H. Okada, H. Takahashi, S. Sato, T. Ohshima, A. Sandhu.
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan and
Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan and
Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-cho, Takasaki, Gunma 370-1292, Japan.
Abstract
The magnetoelectric properties of AlGaN/GaN micro-Hall effect sensors were studied after 380 keV proton irradiation. After irradiation the current-voltage measurements, stability of the magnetic sensitivity of the sensors, and the sheet electron density were degraded with a dramatic decrease of the electron mobility at high temperatures. Raman spectroscopy showed a degradation in the crystalline quality of GaN crystal, but there was no change in the strain.
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