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Appl. Phys. Lett. 102, 171602 (2013).
H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, R. M. Wallace.
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA and
Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, USA.
Abstract
The interfacial chemistry of the native oxide and chemically treated InP samples during atomic layer deposition (ALD) HfO2 growth at 250 °C has been studied by in situ X-ray photoelectron spectroscopy. The In-oxide concentration is seen to gradually decrease on the native oxide and acid etched samples. No significant changes of the P-oxide concentrations are detected, while the P-oxides chemical states are seen to change gradually during the initial cycles of ALD on the native oxide and the chemically treated samples. (NH4)2S treatment strongly decreases In-oxide and P-oxide concentrations prior to ALD and maintains low concentrations during the ALDprocess.
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