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Applied Surface Science, Volume 274, 1 June 2013, Pages 341-344.
Longxing Su, Yuan Zhu, Quanlin Zhang, Mingming Chen, Tianzhun Wu, Xuchun Gui, Bicai Pan, Rong Xiang, Zikang Tang.
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yet-Sen University, Guangzhou 510275, People’s Republic of China and
Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China and
Physics Department, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Abstract
Ternary alloy BeZnO and quaternary alloy BeMgZnO films were prepared on sapphire (0 0 1) substrate by radio-frequency plasma-assisted molecular beam epitaxy (RF-PAMBE). Based on X-ray diffraction (XRD) analysis, no phase segregation is observed for all the alloys. However, BexZn1−xO alloys exhibit a constantly worse crystal quality than BexMgyZn1−x−yO alloys at the similar incorporation contents (i.e. x in BeZnO approximately equals to x + y in BeMgZnO). Optical transmittance spectra were recorded to determine the energy band gap of the films. BeMgZnO was revealed more effective in widening the band gap. Finally, BeZnO and BeMgZnO based MSM structure UV detectors were fabricated. BeMgZnO alloys with better crystal quality showed a favorable optical response and the cutoff wavelength shifted continuously to deep ultraviolet range, while BeZnO based detectors were found no response. This is the first report on BeMgZnO based UV detector, which is a meaningful step forward to the real application.
