Advances in Engineering Advances in Engineering features breaking research judged by Advances in Engineering advisory team to be of key importance in the Engineering field. Papers are selected from over 10,000 published each week from most peer reviewed journals.
Materials Science in Semiconductor Processing, Volume 15, Issue 4, August 2012, Pages 386-392
Souvik Kundu, Ajit Kumar, S. Banerjee, P. Banerji
Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India
Abstract
We report fabrication and electrical characterization of GaAs based metal-interfacial layer-semiconductor (MIS) device with poly[2-methoxy-5-(2/-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), as an interfacial layer. MEH-PPV raises the barrier height in Al/MEH-PPV/p-GaAs MIS device as high as to 0.87 eV. A Capacitance-Voltage (C–V) characteristic exhibits a low hysteresis voltage with an interface states density of 1.69×1011 cm−2 eV−1. Moreover, a high transition frequency (fc) of about 50 kHz was observed in the accumulation mode. The photovoltaic response of Al/MEH-PPV/p-GaAs device was measured under the air masses (AM) 1.0 and 1.5. The open circuit voltage (VOC), short circuit current (ISC), fill factor and the efficiency of the Al/MEH-PPV/p-GaAs device were found to be 1.10 V, 0.52 mA, 0.65, and 5.92%, respectively, under AM 1.0 condition.
